Trabajos de Francisco Gamiz
Trabajos de Nombre
Engineering
Listando 13 trabajos del autor/autora 38
Lista de trabajos en el área Engineering
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Article
Capacitor-less dynamic random access memory based on a III-V transistor with a gate length of 14 nm
Navarro, Carlos; Karg, Siegfried; Marquez, Carlos; Navarro, Santiago; Convertino, Clarissa; Zota, Cezar; Czornomaz, Lukas; Gamiz, Francisco
NATURE ELECTRONICS
2520-1131 (2019)
DOI /
10.1038/s41928-019-0282-6
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1
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Article
A Review of Sharp-Switching Band-Modulation Devices
Cristoloveanu, Sorin; Lacord, Joris; Martinie, Sebastien; Navarro, Carlos; Gamiz, Francisco; Wan, Jing; Dirani, Hassan El; Lee, KyungHwa; Zaslavsky, Alexander
MICROMACHINES
(2021)
DOI /
10.3390/mi12121540
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11
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Hysteresis in As-Synthesized MoS2 Transistors: Origin and Sensing Perspectives
Marquez, Carlos; Salazar, Norberto; Gity, Farzan; Galdon, Jose C.; Navarro, Carlos; Sampedro, Carlos; Hurley, Paul K.; Chang, Edward Yi; Gamiz, Francisco
MICROMACHINES
(2021)
DOI /
10.3390/mi12060646
Gold DOAJ, Green published
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5
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Quantum Enhancement of a S/D Tunneling Model in a 2D MS-EMC Nanodevice Simulator: NEGF Comparison and Impact of Effective Mass Variation
Medina-Bailon, Cristina; Carrillo-Nunez, Hamilton; Lee, Jaehyun; Sampedro, Carlos; Padilla, Jose Luis; Donetti, Luca; Georgiev, Vihar; Gamiz, Francisco; Asenov, Asen
MICROMACHINES
(2020)
DOI /
10.3390/mi11020204
Gold DOAJ, Green published, Green accepted
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3
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Multisubband Ensemble Monte Carlo Analysis of Tunneling Leakage Mechanisms in Ultrascaled FDSOI, DGSOI, and FinFET Devices
Medina-Bailon, Cristina; Padilla, Jose L.; Sadi, Toufik; Sampedro, Carlos; Godoy, Andres; Donetti, Luca; Georgiev, Vihar P.; Gamiz, Francisco; Asenov, Asen
IEEE TRANSACTIONS ON ELECTRON DEVICES
0018-9383 (2019)
DOI /
10.1109/ted.2019.2890985
Green accepted
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4
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Self-Consistent Enhanced S/D Tunneling Implementation in a 2D MS-EMC Nanodevice Simulator
Medina-Bailon, Cristina; Padilla, Jose Luis; Sampedro, Carlos; Donetti, Luca; Gergiev, Vihar P.; Gamiz, Francisco; Asenov, Asen
MICROMACHINES
(2021)
DOI /
10.3390/mi12060601
Gold DOAJ, Green published, Green accepted
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A review of the Z(2)-FET 1T-DRAM memory: Operation mechanisms and key parameters
Cristoloveanu, S.; Lee, K. H.; Parihar, M. S.; El Dirani, H.; Lacord, J.; Martinie, S.; Le Royer, C.; Barbe, J. -Ch.; Mescot, X.; Fonteneau, P.; Galy, Ph.; Gamiz, F.; Navarro, C.; Cheng, B.; Duan, M.; Adamu-Lema, F.; Asenov, A.; Taur, Y.; Xu, Y.; Kim, Y-T.
SOLID-STATE ELECTRONICS
0038-1101 (2018)
DOI /
10.1016/j.sse.2017.11.012
Green accepted
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3
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Article
Performance and reliability in back-gated CVD-grown MoS2 devices
Marquez, Carlos; Salazar, Norberto; Gity, Farzan; Galdon, Jose C.; Navarro, Carlos; Duffy, Ray; Hurley, Paul; Gamiz, Francisco
SOLID-STATE ELECTRONICS
0038-1101 (2021)
DOI /
10.1016/j.sse.2021.108173
Green published, Hybrid
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2
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Thorough Understanding of Retention Time of Z2FET Memory Operation
Duan, M.; Navarro, C.; Cheng, B.; Adamu-Lema, F.; Wang, X.; Georgiev, V. P.; Gamiz, F.; Millar, C.; Asenov, A.
IEEE TRANSACTIONS ON ELECTRON DEVICES
0018-9383 (2019)
DOI /
10.1109/ted.2018.2877977
Green accepted
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Ultra-low power 1T-DRAM in FDSOI technology
El Dirani, H.; Lee, K. H.; Parihar, M. S.; Lacord, J.; Martinie, S.; Barbe, J-Ch.; Mescot, X.; Fonteneau, P.; Broquin, J. -E.; Ghibaudo, G.; Galy, Ph; Gamiz, F.; Taur, Y.; Kim, Y. -T.; Cristoloveanu, S.; Bawedin, M.
MICROELECTRONIC ENGINEERING
0167-9317 (2017)
DOI /
10.1016/j.mee.2017.05.047
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1
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Metamaterial-Based Reconfigurable Intelligent Surface: 3D Meta-Atoms Controlled by Graphene Structures
Molero, Carlos; Palomares-Caballero, Angel; Alex-Amor, Antonio; Parellada-Serrano, Ignacio; Gamiz, Francisco; Padilla, Pablo; Valenzuela-Valdes, Juan F.
IEEE COMMUNICATIONS MAGAZINE
0163-6804 (2021)
DOI /
10.1109/mcom.001.2001161
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Article
Active Radiation-Hardening Strategy in Bulk FinFETs
Calomarde, Antonio; Rubio, Antonio; Moll, Francesc; Gamiz, Francisco
IEEE ACCESS
2169-3536 (2020)
DOI /
10.1109/access.2020.3035974
Gold DOAJ, Green published
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Extended Analysis of the Z(2)-FET: Operation as Capacitorless eDRAM
Navarro, Carlos; Lacord, Joris; Parihar, Mukta Singh; Adamu-Lema, Fikru; Duan, Meng; Rodriguez, Noel; Cheng, Binjie; El Dirani, Hassan; Barbe, Jean-Charles; Fonteneau, Pascal; Bawedin, Maryline; Millar, Campbell; Galy, Philippe; Le Royer, Cyrille; Karg, Si
IEEE TRANSACTIONS ON ELECTRON DEVICES
0018-9383 (2017)
DOI /
10.1109/ted.2017.2751141
Green accepted